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 PHOTOMULTlPLlER TUBES
R636-10, R758-10
UV to Near IR (R636-10:185 to 930 nm, R758-10:160 to 930nm) Spectral Response 28mm(1-1/8 Inch) Diameter, GaAs(Cs) Photocathode, 9-stage,Side-On Type
GENERAL
Parameter Spectral Response Wavelength of Maximum Response MateriaI Photocathode Minimum Effective Area Window Material Structure Dynode Number of Stages Anode to Last Dynode Direct Interelectrode Capacitances Anode to All Other Electrodes Base SuitabIe Socket R636-10 185 to 930 R758-10 160 to 930 300 to 800 GaAs (Cs) 3 12 UV glass Fused silica glass Circular-cage 9 4 6 JEDEC No.B11-88 E678-11A(option) Unit nm nm mm
pF pF
MAXIMUM RATINGS (Absolute Maximum Values)
Supply Voltage Average Anode Current Parameter Between Anode and Cathode Between Anode and Last Dynode Value 1500 250 0.001 Unit Vdc Vdc mA
CHARACTERISTlCS (at 25
)
Min. 400 Typ. 550 62 63 48 0.53 4.5 105 250 2.8 104 2.8 104 2.2 104 0.1 2 20 Max. Unit A/lm mA/W
Parameter Luminous(2856K) Cathode Sensitivity at 350nm at 632.8nm at 852.1nm Red/White Ratio (with R-68 filter) Radiant Luminous(2856K) Anode Sensitivity Radiant at 350nm at 632.8nm at 852.1nm
Gain 100
A/lm A/W 2 nA ns ns
Anode Dark Current at 10A/lm Anode Pulse Rise Time Time Response Electron Transit Time After 30min. storage in darkness NOTE: Anode characteristics are measured with the voItage distribution ratio shown below.
VOLTAGE DlSTRlBUTlON RATlO AND SUPPLY VOLTAGE
K Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Electrodes Ratio 1 1 1 1 1 1 1 1 1 1 SuppIy Voltage : 1250Vdc, K : Cathode, Dy : Dynode, P : Anode P
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. lnformation furnished by HAMAMATS U is believed to be reliabIe. However, no responsibility is assumed for possibIe inaccuracies or ommissions. Specifications are subject to change without notice. No patent right are granted to any of the circuits described herein. (c) 1994 Hamamatsu Photonics K.K.
PHOTOMULTlPLlER TUBES R636-10, R758-10
Figure 1: Typical Spectral Response Figure 2: Typical Anode Sensitivity and Typical Gain
TPMSB0070EB
100
TPMSB0069EA
103
107
YP .)
R758-10 R636-10 CATHODE RADIANT SENSITIVITY(mA/W) QUANTUM EFFICIENCY(%) R636-10 R758-10
CATHODE RADIANT SENSITIVITY
ANODE LUMINOUS SENSITIVITY(A/lm)
102
S SE I NS
TI
VI
TY
(T
106
10
QUANTUM EFFICIENCY 1
101
AN O DE
LU
MI
U NO
GA
IN
(T
YP
.)
105
100
104
10-1
103
0.1
10-2
102
0.01 200 400 600 800 1000 WAVELENGTH(nm)
10-3 500
700
1000
101 1500
SUPPLY VOLTAGE(V)
Figure 3: Dimensional Outline and Basing Diagram (Unit : mm)
29.0 1.7 8MIN. 3MIN.
49
Socket
(E678 - 11A)
PHOTOCATHODE
DY5 DY6 6 DY7
38
5
7
16MIN.
12MIN.
3.5
DY4 4
8 DY8 9 DY9 10 P 1 11 K
5
80MAX.
DY3 3
94MAX.
2.5
DY2
2
DY1 DIRECTION OF LIGHT
49.0
BOTTOM VIEW (BASING DIAGRAM)
TPMSA0027EC
29 4
34MAX. 11 PIN BASE JEDEC No. B11-88
HA COATING
HAMAMATSU PHOTONICS K.K., Electoron Tube Center 314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limted: Lough Point, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN2 7JA, United Kingdom, Telephone: (44)181-367-3560, Fax: (44)181-367-6384 North Europe: Hamamatsu Photonics Norden AB: Farogatan 7, S-164-40 Kista Sweden, Telephone: (46)8-703-29-50, Fax: (46)8-750-58-95 Italy: Hamamatsu Photonics Italia: S.R.L.: Via Della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)2-935 81 733, Fax: (39)2-935 81 741
18
TACCA0008EA
33
TPMS1016E03 JUN. 1994
GAIN


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